- 您现在的位置：买卖IC网 > Sheet目录446 > IRFR220TRLPBF (Vishay Siliconix)MOSFET N-CH 200V 4.8A DPAK
Package Information
Vishay Siliconix
TO-251AA (HIGH VOLTAGE)
E1
4
Thermal PAD
3
E
4
b 4
A
0.010 0.25 M C A B
A
c2
θ 2
L2 4
θ 1
A
D1
4
B
3
C
Seating
5
plane
(Dat u m A)
L1 L3
C
C
L
B
B
A
3 x b 2
c
A1
V ie w A - A
2xe
3x b
0.010 0.25 M C A B
Base
Lead tip
Plating
5
b 1, b 3
metal
(c)
c1
5
( b , b 2)
Section B - B and C - C
MILLIMETERS
INCHES
MILLIMETERS
INCHES
DIM.
A
A1
b
MIN.
2.18
0.89
0.64
MAX.
2.39
1.14
0.89
MIN.
0.086
0.035
0.025
MAX.
0.094
0.045
0.035
DIM.
D1
E
E1
MIN.
5.21
6.35
4.32
MAX.
-
6.73
-
MIN.
0.205
0.250
0.170
MAX.
-
0.265
-
b1
0.65
0.79
0.026
0.031
e
2.29 BSC
2.29 BSC
b2
b3
b4
c
c1
c2
0.76
0.76
4.95
0.46
0.41
0.46
1.14
1.04
5.46
0.61
0.56
0.86
0.030
0.030
0.195
0.018
0.016
0.018
0.045
0.041
0.215
0.024
0.022
0.034
L
L1
L2
L3
θ 1
θ 2
8.89
1.91
0.89
1.14
0'
25'
9.65
2.29
1.27
1.52
15'
35'
0.350
0.075
0.035
0.045
0'
25'
0.380
0.090
0.050
0.060
15'
35'
D
5.97
6.22
0.235
0.245
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Document Number: 91362
Revision: 15-Sep-08
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IRFR2407TRRPBF
MOSFET N-CH 75V 42A DPAK
IRFR2905ZTRRPBF
MOSFET N-CH 55V 42A DPAK
IRFR310TRLPBF
MOSFET N-CH 400V 1.7A DPAK
IRFR320TRRPBF
MOSFET N-CH 400V 3.1A DPAK
IRFR3412TRPBF
MOSFET N-CH 100V 48A DPAK
IRFR3418TRPBF
MOSFET N-CH 80V 70A DPAK
IRFR3504TRPBF
MOSFET N-CH 40V 30A DPAK
IRFR3706CTRLPBF
MOSFET N-CH 20V 75A DPAK
相关代理商/技术参数
IRFR220TRPBF
功能描述:MOSFET N-Chan 200V 4.8 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR220TRR
功能描述:MOSFET N-Chan 200V 4.8 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR220TRRPBF
功能描述:MOSFET N-Chan 200V 4.8 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR221
制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFR222
制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFR2229A
制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFR224
功能描述:MOSFET N-Chan 250V 3.8 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR224A
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 3.8A I(D) | TO-252AA